BCV27, BCV47
NPN Silicon Darlington Transistors
• For general AF applications
2
3
• High collector current
1
• High current gain
• Complementary types: BCV26, BCV46 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCV27
FFs
1=B
2=E
3=C
SOT23
BCV47
FGs
1=B
2=E
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BCV27
30
BCV47
60
Collector-base voltage
Unit
VCBO
BCV27
40
BCV47
80
Emitter-base voltage
VEBO
10
Collector current
IC
500
Peak collector current, tp ≤ 10 ms
ICM
800
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
360
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
mA
TS ≤ 74 °C
1
-65 ... 150
2011-10-05
BCV27, BCV47
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
≤ 210
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BCV27
30
-
-
IC = 10 mA, IB = 0 , BCV47
60
-
-
IC = 100 µA, IE = 0 , BCV27
40
-
-
IC = 100 µA, IE = 0 , BCV47
80
-
-
10
-
-
Collector-base breakdown voltage
Unit
-
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
V
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 30 V, IE = 0 , BCV27
-
-
0.1
VCB = 60 V, IE = 0 , BCV47
-
-
0.1
VCB = 30 V, IE = 0 , TA = 150 °C, BCV27
-
-
10
VCB = 60 V, IE = 0 , TA = 150 °C, BCV47
-
-
10
-
-
100
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
hFE
IC = 100 µA, VCE = 1 V, BCV27
4000
-
-
IC = 100 µA, VCE = 1 V, BCV47
2000
-
-
IC = 10 mA, VCE = 5 V, BCV27
10000
-
-
IC = 10 mA, VCE = 5 V, BCV47
4000
-
-
IC = 100 mA, VCE = 5 V, BCV27
20000
-
-
IC = 100 mA, VCE = 5 V, BCV47
10000
-
-
IC = 0.5 A, VCE = 5 V, BCV27
4000
-
-
IC = 0.5 A, VCE = 5 V, BCV47
2000
-
-
VCEsat
-
-
1
VBEsat
-
-
1.5
Collector-emitter saturation voltage1)
V
IC = 100 mA, IB = 0.1 mA
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
2
2011-10-05
BCV27, BCV47
1Pulse
test: t < 300µs; D < 2%
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
170
-
MHz
Ccb
-
3
-
pF
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
3
2011-10-05
BCV27, BCV47
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 6
h FE
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
BCV 27/47
EHP00307
BCV 27/47
10 3
5
EHP00305
Ι C mA
125 ˚C
10 5
150 ˚C
25 ˚C
-50 ˚C
10 2
25 ˚C
5
5
-55 ˚C
10 4
10 1
5
5
10 3
10 -1
10 0
10
0
10
1
2
10
mA 10
3
0
0.5
1.0
ΙC
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
IC = ƒ(VBEsat), hFE = 10
ΙC
BCV 27/47
1.5
V CEsat
Base-emitter saturation voltage
10 3
V
EHP00304
10 4
BCV 27/47
EHP00306
nA
mA
Ι CBO
150 ˚C
25 ˚C
-50 ˚C
10 2
max
10 3
5
10 2
typ
10 1
10 1
5
10 0
0
1.0
2.0
V
10 0
3.0
V BEsat
0
50
100
˚C
150
TA
4
2011-10-05
BCV27, BCV47
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 3
BCV 27/47
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
19
EHP00303
pF
MHz
CCB/CEB
fT
15
13
11
10
2
CEB
9
5
7
5
CCB
3
10 1
10 0
10 1
10 2
mA
1
0
10 3
4
8
12
16
V
22
VCB/VEB
ΙC
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
400
10 3
BCV 27/47
Ptot max
5
Ptot DC
mW
EHP00301
tp
D=
T
T
300
Ptot
tp
10 2
250
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
200
150
10 1
100
5
50
0
0
15
30
45
60
75
90 105 120
°C
TS
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2011-10-05
Package SOT23
BCV27, BCV47
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2011-10-05
BCV27, BCV47
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
7
2011-10-05